WTPB16A60SW datasheet(2/6 Pages) WINSEMI

tên linh kiện	WTPB16A60SW

Giải thích chi tiết về linh kiện	Sensitive Gate Bi-Directional Triode Thyristor

PDF	6 Pages

Scroll/Zoom	100%

nhà sản xuất	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

Trang chủ	http://www.winsemi.com

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2 / 6 page

WTPB16A60SW

2/6

Symbol

Characteristics

Min

Typ.

Max

Unit

IDRM//IRRM

Peak Forward or Reverse Blocking Current

)

J=25℃

μA

TJ=125℃

VTM

Forward “On” Voltage

(Note2)

(ITM = 22.5A tp=380μs)

1.55

IGT

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 33 Ω)

T2+G+

T2+G-

T2-G-

VGT

Gate Trigger Voltage (Continuous dc)

(VD =12 Vdc, RL = 33 Ω)

T2+G+

T2+G-

T2-G-

1.2

VGD

Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125℃,)

0.2

dV/dt

Critical rate of rise of commutation Voltage (VD=0.67VDRM)

V/μs

Holding Current (IT= 100 mA)

Latching current

(VD =12 Vdc,IGT=0.1A)

T2+G+

T2+G-

T2-G-

Dynamic resistance

mΩ

Steady,

Steady, keep

keep

keep you

you

you advance

advance

Ellllec

ectri

tri

trical

cal

cal Ch

Cha

arrrrac

actttte

eri

ris

sti

tics

cs (T

J = 25°C unless otherwise specified)

DRM

RRM,

Note 2. Forward current applied for 1 ms maximum duration, duty cycle

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