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Giải thích chi tiết về linh kiện  Bi-Directional Triode Thyristor
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nhà sản xuất  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Trang chủ  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

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WTPB4A60SW
WTPB4A60SW
WTPB4A60SW
WTPB4A60SW
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Bi-Directional
Bi-Directional
Bi-Directional
Bi-Directional T
T
T
Trio
rio
rio
riode
de
de
de Thyrist
Thyrist
Thyrist
Thyristo
o
o
orrrr
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ I
TM)
◆ High Commutation dv/dt
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings (T
J=
25°C unless otherwise specified)
Symbol
Parameter
Condition
Ratings Units
V
DRM/VRRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
J
= 110 °C
4.0
A
I
TSM
Surge On-State Current
One cycle, Peak value, non-
repetitive full cycle
50Hz
30
A
60Hz
31
2
I t
I2t
5.1
A2s
P
GM
Peak Gate Power Dissipation
5
W
P
G(AV)
Average Gate Power Dissipation
T
J
= 125 °C
1
W
I
GM
Peak Gate Current
T
J
= 125 °C
4.0
A
V
GM
Peak Gate Voltage
7.0
V
T
J
Operating Junction Temperature
-40~+150
℃
T
STG
Storage Temperature
-40~+150
℃
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case(DC)
2.6
℃/W
RθJA
Thermal Resistance Junction to Ambient(DC)
60
℃/W
Jan 2009. Rev. 0
T02-1


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