RB548W

Diodes

1/2

Schottky barrier diode

RB548W

Application

External dimensions (Units : mm)

Rectifying small power

Features

1) Extra small mold type. (EMD3)

2) High reliability.

Construction

Silicon epitaxial planer

Circuit

(1) K

(2) A

(3) A, K

Absolute maximum ratings（Ta=25

°C）

Parameter

Symbol

Limits

Unit

Reverse voltage (DC)

30

V

Average rectified forward current

100

mA

Forward current surge peak

0.5

mA

Junction temperature

Tj

125

°C

Storage temperature

Tstg

°C

−40 to +125

∗1

∗1 Rating of per diode

∗2 60Hz, 1cyc. Rating of per diode

∗2

Electrical characteristics（Ta=25

°C）

∗Please pay attention to static electricity when handling.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Forward voltage

−−

0.450

V

=10mA

Reverse current

−−

0.5

ROHM : EMD3

EIAJ :

JEDEC :

(2)

(1)

(3)

0.2

0.2

0.5 0.5

1.0

±0.1

1.6

±0.2

0.3

−0.05

+0.1

+0.1

−0.05

+0.1

−0.05

0.55

±0.1

0.7

±0.1

0.15

±0.05

0~0.1