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SFP3710G bảng dữ liệu(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

tên linh kiện SFP3710G
Giải thích chi tiết về linh kiện  Silicon N-Channel MOSFET
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SFP3710G bảng dữ liệu(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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SFP3710G
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Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=100V,VGS=0V
-
-
20
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
100
-
-
V
Break voltage Temperature
Coefficient
△BVDSS/
△TJ
ID=1mA, Referenced to
25℃
-
0.1
-
V/℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=35A
-
-
18
mΩ
Forward Transconductance
gfs
VDS=50V,ID=35A
-
35
-
S
Input capacitance
Ciss
VDS=25V,
VGS=0V,
f=1MHz
-
2990
-
pF
Reverse transfer capacitance
Crss
-
160
-
Output capacitance
Coss
-
3000
-
Switching time
Rise time
tr
VDD=28V,
ID=75A，
RG=6.8Ω，
(Note4,5)
-
18
-
ns
Turn-on time
ton
-
86
-
Fall time
tf
-
47
-
Turn-off
time
toff
-
60
-
Total gate charge(gate-source
plus gate-drain)
Qg
VDD=80V,
VGS=10V,
ID=35A
(Note4,5)
-
1180
-
nC
Gate-source charge
Qgs
-
190
-
Gate-drain("miller") Charge
Qgd
-
300
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
59
A
Pulse drain reverse current
IDRP
-
-
-
240
A
Forward voltage(diode)
VDSF
IS=35A,VGS=0V
-
-
1.5
V
Reverse recovery time
trr
IDR=75A,VDD=25V,
dIDR / dt =100 A / µs
-
56
75
ns
Reverse recovery charge
Qrr
-
106
160
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=50µH IAS=59A,VDD=50V,RG=25Ω ,Starting TJ=25℃
3.ISD≤59A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution



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