BTS130 datasheet(2/9 Pages) SIEMENS

tên linh kiện	BTS130

Giải thích chi tiết về linh kiện	TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

PDF	9 Pages

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nhà sản xuất	SIEMENS [Siemens Semiconductor Group]

Trang chủ	http://www.siemens.com/

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Semiconductor Group

Electrical Characteristics

j = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

GS = 0, ID = 0.25 mA

(BR)DSS

–

Gate threshold voltage

GS = VDS, ID = 1 mA

GS(th)

2.5

3.0

3.5

Zero gate voltage drain current

GS = 0 V, VDS = 50 V

j = 25 °C

j = 125 °C

DSS

–

100

300

µA

Gate-source leakage current

GS = 20 V, VDS = 0

j = 25 °C

j = 150 °C

GSS

–

100

µA

Drain-source on-state resistance

GS = 10 V, ID =17 A

DS(on)

–

0.04

0.05

Ω

Dynamic Characteristics

Forward transconductance

DS ≥ 2 × ID × RDS(on)max, ID = 17 A

8.0

13.0

18.0

Input capacitance

GS = 0, VDS = 25 V, f = 1 MHz

iss

700

940

1250

Output capacitance

GS = 0, VDS = 25 V, f = 1 MHz

oss

–

500

750

Reverse transfer capacitance

GS = 0, VDS = 25 V, f = 1 MHz

rss

–

180

270

Turn-on time

on, (ton = td(on) + tr)

CC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω

d(on)

–25

–60

Turn-off time

off, (toff = td(off) + tf)

CC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω

d(off)

–

100

130

–75

BTS 130

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