MBR4060WTPBF datasheet(2/7 Pages) VISHAY

2 / 7 page

VS-MBR4060WTPbF, VS-MBR4060WT-N3

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Vishay Semiconductors

Revision: 30-Aug-11

Document Number: 94296

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

VFM (1)

20 A

TJ = 25 °C

0.72

TJ = 125 °C

0.62

Maximum instantaneous reverse current

IRM

TJ = 25 °C

Rated DC voltage

1.0

TJ = 125 °C

100

Maximum junction capacitance

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C

720

Typical series inductance

Measured from top of terminal to mounting plane

7.5

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

TJ, TStg

- 55 to 150

°C

Maximum thermal resistance,

junction to case per package

RthJC

DC operation

2.20

°C/W

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

1.10

Maximum thermal resistance,

junction to ambient

RthJA

DC operation

Approximate weight

0.21

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-247AC

MBR4060WT

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