BAS19-V datasheet(2/5 Pages) VISHAY

2 / 5 page

www.vishay.com

Document Number 85540

Rev. 1.7, 10-Nov-10

BAS19-V, BAS20-V, BAS21-V

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

1) Measured under pulse conditions; Pulse time = T

p ≤ 0.3 ms

2) Device on fiberglass substrate, see layout on next page

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Device on fiberglass substrate, see layout on next page

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Value

Unit

Continuous reverse voltage

BAS19-V

100

BAS20-V

150

BAS21-V

200

Repetitive peak reverse voltage

BAS19-V

VRRM

120

BAS20-V

VRRM

200

BAS21-V

VRRM

250

Non-repetitive peak forward

current

t = 1 µs

IFSM

2.5

Non-repetitive peak forward

surge current

t = 1 s

IFSM

0.5

Maximum average forward

rectified current

(av. over any 20 ms period)

IF(AV)

200 1)

DC forward current

200 2)

Repetitive peak forward current

IFRM

625

Power dissipation

Ptot

250 2)

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

RthJA

430 1)

°C

Junction temperature

150

°C

Storage temperature range

Tstg

- 65 to + 150

°C

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 100 mA

1.0

IF = 200 mA

1.25

Leakage current

VR = VRmax.

100

VR = VRmax., Tj = 150 °C

100

μA

Dynamic forward resistance

IF = 10 mA

Diode capacitance

VR = 0, f = 1 MHz

Ctot

5pF

Reverse recovery time

IF = IR = 30 mA, RL = 100 Ω,

Irr = 3 mA

trr

BAS19-V bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

BAS19-V bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5

bảng dữ liệu tải về

Link URL