SSPS7332N datasheet(2/4 Pages) SECOS

tên linh kiện	SSPS7332N

Giải thích chi tiết về linh kiện	짹17 A , 30 V , RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

nhà sản xuất	SECOS [SeCoS Halbleitertechnologie GmbH]

Trang chủ	http://www.secosgmbh.com

Logo

2 / 4 page

SSPS7332N

±17 A , 30 V , RDS(ON) 13.5 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

19-Jul-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS=20V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=24V, VGS=0

VDS=24V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

VDS=5V, VGS=10V

Drain-Source On-Resistance

RDS(ON)

13.5

VGS=10V, ID=10A

VGS=4.5V, ID=8A

Forward Transconductance

gfs

VDS=15V, ID=10A

Diode Forward Voltage

VSD

0.7

IS=2.3A, VGS=0

Dynamic

Total Gate Charge

12.5

VDS=15V

VGS=4.5V

ID=10A

Gate-Source Charge

Qgs

2.6

Gate-Drain Charge

Qgd

4.6

Turn-On Delay Time

Td(on)

VDD=25V

ID=1A

VGEN=10V

RL=25

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

SSPS7332N bảng dữ liệu(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSPS7332N bảng dữ liệu(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL