SSG4512CE datasheet(1/7 Pages) SECOS

tên linh kiện	SSG4512CE

Giải thích chi tiết về linh kiện	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m

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nhà sản xuất	SECOS [SeCoS Halbleitertechnologie GmbH]

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SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ

Ω

P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ

Ω

Elektronische Bauelemente

26-Dec-2011 Rev. A

Page 1 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low RDS(on)

and to ensure minimal power loss and heat dissipation.

FEATURES

Low RDS(on) provides higher efficiency and

extends battery life.

Low thermal impedance copper leadframe

SOP-8 saves board space.

Fast Switch Speed.

High performance trench technology.

APPLICATION

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

2.5K

13 inch

MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

N-Ch

P-Ch

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

1

TA=25°C

ID

6.9

-5.2

A

TA=70°C

5.4

-6.8

A

Pulsed Drain Current

2

IDM

20

-20

A

Continuous Source Current (Diode Conduction)

1

IS

1.3

-1.3

A

Total Power Dissipation

1

TA=25°C

PD

2.1

W

TA=70°C

1.3

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Ratings

Maximum Junction-ambient

1

t<=5 sec

RθJA

60

°C / W

Maximum Junction-Case

1

t<=5 sec

RθJC

40

°C / W

Notes：

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature

SOP-8

A

H

B

M

D

C

J

K

F

L

E

N

G

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

S1

G1

S2

D1

D2

G2

Số phần tương tự - SSG4512CE

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
SHENZHEN DOINGTER SEMIC...	SSG4512CE	2Mb / 8P	P-Chanel and N-Channel MOSFET use advanced trench technology
VBsemi Electronics Co.,...	SSG4512CE	2Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET
SeCoS Halbleitertechnol...	SSG4512CE	3Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET

More results

Mô tả tương tự - SSG4512CE

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
SeCoS Halbleitertechnol...	SDN520C	84Kb / 2P	N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
	SSG4502CE	3Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
	SSG4520H	440Kb / 6P	N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
	SSG9435BDY	616Kb / 4P	-5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET
	SSPS7330N	612Kb / 4P	11 A , 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET
	SSPS7331P	596Kb / 4P	-13.4 A , -30 V , RDS(ON) 13 m P-Ch Enhancement Mode Power MOSFET
	SSPS7332N	590Kb / 4P	짹17 A , 30 V , RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET
	SSPS7333P	124Kb / 2P	-10.9 A , -30 V , RDS(ON) 20 m P-Ch Enhancement Mode Power MOSFET
	SSPS7334N	512Kb / 4P	짹17 A , 30 V , RDS(ON) 8.5 m N-Ch Enhancement Mode Power MOSFET
	STT6602	2Mb / 7P	N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

More results

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