RU1H100Q datasheet(2/11 Pages) RUICHIPS

2 / 11 page

Rev. A –SEP., 2010

www.ruichips.com

RU1H100

Electrical Characteristics (T

A=25°C Unless Otherwise Noted)

RU1H100

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

100

VDS= 100V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

GS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

IGSS

Gate Leakage Current

VGS=±25V, VDS=0V

±100

RDS(ON)

③

Drain-Source On-state Resistance

VGS= 10V, IDS=40A

Ω

Notes:

①Current limited by package.

② Limited by TJmax, IAS =40A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C

③Pulse test ; Pulse width

≤400

µs, duty cycle≤2%.

④Guaranteed by design, not subject to production testing.

Diode Characteristics

VSD

③

Diode Forward Voltage

ISD=40A, VGS=0V

1.2

trr

Reverse Recovery Time

qrr

Reverse Recovery Charge

ISD=40A, dlSD/dt=100A/

µs

Dynamic Characteristics

④

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

1.5

Ω

Ciss

Input Capacitance

3450

Coss

Output Capacitance

265

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS= 50V,

Frequency=1.0MHz

148

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=50V,IDS= 40A, VGEN=

10V,RG=5.6

Ω

Gate Charge Characteristics

④

Total Gate Charge

135

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=80V, VGS= 10V,

IDS=40A

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