TSM05N03 datasheet(2/4 Pages) TSC

2 / 4 page

Preliminary

TSM05N03

30V N-Channel MOSFET

2/4

Version: Preliminary

Electrical Specifications (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 30V, VGS = 0V

IDSS

1.0

µA

On-State Drain Current

VDS =5V, VGS = 10V

ID(ON)

Drain-Source On-State Resistance

VGS = 10V, ID = 5A

RDS(ON)

VGS = 4.5V, ID = 3.8A

Forward Transconductance

VDS = 10V, ID = 5A

gfs

Diode Forward Voltage

IS = 2.5A, VGS = 0V

VSD

1.2

Dynamic

Total Gate Charge

VDS = 10V, ID = 5A,

VGS = 5V

4.2

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

1.35

Input Capacitance

VDS = 15V, VGS = 0V,

f = 1.0MHz

Ciss

555

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

Switching

b.c

Turn-On Delay Time

VDD = 10V, RL = 15 ,

ID = 1A, VGEN = 10V,

RG = 6

td(on)

4.2

5.5

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

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