BLF888AS datasheet(1/17 Pages) PHILIPS

tên linh kiện	BLF888AS

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1.

Product profile

1.1 General description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

[1]

Measured at

 = 10 %; t

p = 100 s.

[2]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 Excellent ruggedness (VSWR

 40 : 1 through all phases)

 Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

 High power gain

 High efficiency

 Designed for broadband operation (470 MHz to 860 MHz)

 Internal input matching for high gain and optimum broadband operation

 Excellent reliability

 Easy power control

 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

1.3 Applications

 Communication transmitter applications in the UHF band

 Industrial applications in the UHF band

BLF888A; BLF888AS

UHF power LDMOS transistor

Rev. 3 — 30 August 2011

Product data sheet

Table 1.

Application information

RF performance at VDS = 50 V unless otherwise specified.

Mode of operation

f

PL(AV)

PL(M)

Gp



D

IMD3

IMDshldr

PAR

(MHz)

(W)

(dB)

(%)

(dBc)

(dB)

RF performance in a common source 860 MHz narrowband test circuit

2-tone, class-AB

f1 = 860; f2 = 860.1

250

-

21

46

32

-

pulsed, class-AB [1]

860

-

600

20

58

-

DVB-T (8k OFDM)

858

110

-

21

31

-

32 [2]

8.2 [3]

858

125

-

21

32.5

-

30 [2]

8.0 [3]

RF performance in a common source 470 MHz to 860 MHz broadband test circuit

DVB-T (8k OFDM)

858

110

-

20

30

-

32 [2]

8.0 [3]

858

120

-

20

31

-

31 [2]

7.8 [3]

Số phần tương tự - BLF888AS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BLF888AS	9Mb / 130P	RF Manual 16th edition June 2012
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