BLF879P datasheet(4/15 Pages) PHILIPS

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BLF879P

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Product data sheet

Rev. 1 — 23 August 2011

4 of 15

NXP Semiconductors

BLF879P

UHF power LDMOS transistor

[1]

Idq for total device

[2]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

6.1 Ruggedness in class-AB operation

The BLF879P is capable of withstanding a load mismatch corresponding to

VSWR = 40 : 1 through all phases under the following conditions: VDS =42V;

f = 860 MHz at rated power.

DVB-T (8k OFDM), class-AB

VDS

drain-source voltage

IDq

quiescent drain current

[1] -1.3

PL(AV)

average output power

f = 858 MHz

power gain

f = 858 MHz



drain efficiency

f = 858 MHz

IMDshldr

intermodulation distortion shoulder

f = 858 MHz

[2] -

31 28

dBc

PAR

peak-to-average ratio

f = 858 MHz

[3] -8.2

VGS = 0 V; f = 1 MHz.

Fig 1.

Output capacitance as a function of drain-source voltage; typical values per

section

Table 7.

RF characteristics …continued

RF characteristics in NXP production narrowband test circuit; Tcase =25 C unless otherwise

specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

aaa-000339

VDS (V)

060

200

100

300

400

Coss

(pF)

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