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BLF642 bảng dữ liệu(PDF) 1 Page - NXP Semiconductors |
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BLF642 bảng dữ liệu(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page ![]() 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. 1.2 Features and benefits CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq =0.2 A : Average output power = 35 W Power gain = 19 dB Drain efficiency = 63 % 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq =0.2 A : Average output power = 17.5 W Power gain = 19 dB Drain efficiency = 48 % Intermodulation distortion = 28 dBc Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation f VDS PL Gp D IMD (MHz) (V) (W) (dB) (%) (dBc) CW, class-AB 1300 32 35 19 63 - 2-tone, class-AB 1300 32 17.5 19 48 28 |
Số phần tương tự - BLF642 |
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Mô tả tương tự - BLF642 |
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