VT2080C datasheet(3/5 Pages) VISHAY

tên linh kiện	VT2080C

Giải thích chi tiết về linh kiện	Dual Trench MOS Barrier Schottky Rectifier

PDF	5 Pages

Scroll/Zoom	100%

nhà sản xuất	VISHAY [Vishay Siliconix]

Trang chủ	http://www.vishay.com

Logo

3 / 5 page

VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3

www.vishay.com

Vishay General Semiconductor

Revision: 11-Sep-13

Document Number: 89166

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Device

A = 150 °C

A = 125 °C

A = 25 °C

Instantaneous Forward Voltage (V)

100

0.1

0.6

1.2

0.2

0.8

0.4

1.0

A = 100 °C

Percent of Rated Peak Reverse Voltage (%)

100

0.001

100

0.1

0.01

A = 150 °C

A = 125 °C

A = 25 °C

A = 100 °C

Reverse Voltage (V)

10 000

0.1

100

J = 25 °C

f = 1.0 MHz

sig = 50 mVp-p

1000

t - Pulse Duration (s)

0.1

0.01

100

0.1

V(B,I)T2080C

VFT2080C

Junction to Case

VT2080C bảng dữ liệu(PDF) 3 Page - Vishay Siliconix

VT2080C bảng dữ liệu(HTML) 3 Page - Vishay Siliconix

Html Pages

1 2 3 4 5

bảng dữ liệu tải về

Link URL