BCP71M datasheet(2/4 Pages) SIEMENS

tên linh kiện	BCP71M

Giải thích chi tiết về linh kiện	NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)

PDF	4 Pages

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nhà sản xuất	SIEMENS [Siemens Semiconductor Group]

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BCP 71M

Semiconductor Group

Au -12-1998

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Unit

Values

typ.

min.

max.

DC Characteristics

V(BR)CEO

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CBO

Collector-base breakdown voltage

IC = 100 µA, IB = 0

V(BR)EBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 8 V, IE = 0

ICBO

100

Collector cutoff current

VCB = 8 V, IE = 0 , TA = 150 °C

ICBO

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain 1)

IC = 10 mA, VCE = 5 V

IC = 500 mA, VCE = 1 V

IC = 2 A, VCE = 2 V

475

hFE

Collector-emitter saturation voltage1)

IC = 2 A, IB = 0.2 A

VCEsat

0.18

Base-emitter saturation voltage 1)

IC = 2 A, IB = 0.2 A

1.2

VBEsat

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

100

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

1) Pulse test: t < 300

µs; D < 2%

Semiconductor Group

1998-11-01

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