Document Number: 81021

www.vishay.com

Rev. 1.8, 25-Jun-09

1

Infrared Emitting Diode, 875 nm, GaAlAs

TSHA6200, TSHA6201, TSHA6202, TSHA6203

Vishay Semiconductors

DESCRIPTION

The TSHA620. series are infrared, 875 nm emitting diodes in

GaAlAs technology, molded in a clear, untinted plastic

package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength:

λ

• High reliability

• Angle of half intensity:

ϕ = ± 12°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• Infrared remote control and free air data transmission

systems

• This emitter series is dedicated to systems with panes in

transmission

space

between

emitter

and

detector,

because of the low absorbtion of 875 nm radiation in glass

Note

Test conditions see table “Basic Characteristics“

Note

MOQ: minimum order quantity

Note

94 8389

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

λ

TSHA6200

40

± 12

875

600

TSHA6201

50

± 12

875

600

TSHA6202

60

± 12

875

600

TSHA6203

65

± 12

875

600

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHA6200

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6201

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6202

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6203

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

2.5

A

Power dissipation

180

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

≤ 5 s, 2 mm from case

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm, soldered on PCB

230

K/W