CSD25302Q2 datasheet(1/9 Pages) TI

tên linh kiện	CSD25302Q2

Giải thích chi tiết về linh kiện	P-Channel NexFET??Power MOSFET

PDF	9 Pages

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nhà sản xuất	TI [Texas Instruments]

Trang chủ	http://www.ti.com

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1

S

2

S

3

S

4

S

5

G

6

D

P0112-01

Qg − GateCharge − nC

0

1

2

3

4

5

6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

G003

ID = −3A

VDS = −10V

−VGS − Gate to Source Voltage − V

0

25

50

75

100

125

150

1

2

3

4

5

6

7

8

G006

ID = −3A

TC = 125°C

TC = 25°C

CSD25302Q2

www.ti.com

SLPS234A – NOVEMBER 2009 – REVISED OCTOBER 2010

P-Channel NexFET™ Power MOSFET

1

FEATURES

PRODUCT SUMMARY

•

Ultralow Qg and Qgd

VDS

Drain to Source Voltage

–20

V

•

Low Thermal Resistance

Qg

Gate Charge Total (–4.5V)

2.6

nC

•

Avalanche Rated

Qgd

Gate Charge Gate to Drain

0.5

nC

•

Pb Free Terminal Plating

VGS = –1.8V

71

m

Ω

RDS(on)

Drain to Source On Resistance

VGS = –2.5V

56

m

Ω

•

RoHS Compliant

VGS = –4.5V

39

m

Ω

•

Halogen Free

VGS(th)

Threshold Voltage

–0.65

V

•

SON 2-mm × 2-mm Plastic Package

ORDERING INFORMATION

APPLICATIONS

Device

Package

Media

Qty

Ship

•

Battery Management

SON 2-mm × 2-mm

13-Inch

Tape and

CSD25302Q2

3000

•

Load Management

Plastic Package

Reel

•

Battery Protection

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

TA = 25°C unless otherwise stated

VALUE

UNIT

VDS

Drain to Source Voltage

–20

V

The device has been designed to deliver the lowest

VGS

Gate to Source Voltage

±8

V

on resistance and gate charge in the smallest outline

Continuous Drain Current, TC = 25°C

–5

A

possible with excellent thermal characteristics in an

ID

ultra low profile. Low on resistance coupled with the

Continuous Drain Current(1)

–5

A

extremely small footprint and low profile make the

IDM

Pulsed Drain Current, TA = 25°C

(2)

–20

A

device ideal for battery operated space constrained

PD

Power Dissipation

2.4

W

applications.

TJ,

Operating Junction and Storage

–55 to 150

°C

TSTG

Temperature Range

Top View

(1) Package Limited

(2) Pulse duration 10 µs, duty cycle

≤2%

RDS(on) vs VGS

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Số phần tương tự - CSD25302Q2

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