Document Number: 69057

S09-2250-Rev. D, 26-Oct-09

www.vishay.com

3

Vishay Siliconix

SiC413

Notes:

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is

not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.

Notes:

b. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to GND unless otherwise

noted.

c. Peak value is specified for pulses

≤ 100 ns.

a

Parameter

Symbol

Min.

Max.

Unit

Input Breakdown Voltage

- 0.3

28

V

Common Switch Node Breakdown Voltage

- 1

28

c

-1

30

Logic Inputs

- 0.3

6

Bootstrap Voltage

- 0.3

33

Maximum Power Dissipation

1.5

W

Operating Temperature

- 25

125

°C

Storage Junction Temperature

- 40

150

Soldering Peak Temperature

260

Parameter

Symbol

Min.

Typ.

Max.

Unit

Input Voltage

4.75

12

26

V

Logic Inputs

4.5

5

5.5

Common Switch Node

- 0.3

12

26

c

- 0.3

24

28

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Unit

Junction-to-Case Resistance

In Operation, Max. Junction

Contact Vishay for

thermal design

assistance

°C/W

Junction-to-Ambient Resistance

PCB = Copper 25 mm x 25 mm

Case Top to Board Edge

PCB = EVBSiC413 Rev. 3.0; No Forced Airflow