BDX94 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BDX92/94/96

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDX92

-45

BDX94

-60

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BDX96

IC= -30mA ;IB=0

-80

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

-0.8

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -5A; IB= -1A

-1.0

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

-1.5

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= -5A; IB= -1A

-2.0

VBE(on)

Base-Emitter On Voltage

IC= -3A; VCE= -2V

-1.4

BDX92

VCB= -60V; IE= 0

VCB= -30V; IE= 0; TC= 150℃

-0.1

-2.0

BDX94

VCB= -80V; IE= 0

VCB= -40V; IE= 0; TC= 150℃

-0.1

-2.0

ICBO

Collector

Cutoff Current

BDX96

VCB= -100V; IE= 0

VCB= -50V; IE= 0; TC= 150℃

-0.1

-2.0

BDX92

VCE= -60V;IB= 0

BDX94

VCE= -80V;IB= 0

ICEO

Collector

Cutoff Current

BDX96

VCE= -100V;IB= 0

-0.2

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.1

hFE-1

DC Current Gain

IC= -3A; VCE= -2V

hFE-2

DC Current Gain

IC= -5A; VCE= -2V

Current-Gain—Bandwidth Product

IC= -1A; VCE= -10V

MHz

Switching times

ton

Turn-on Time

1.0

μs

toff

Turn-off Time

IC= -3A; IB1= -IB2= -0.3A

2.0

μs

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