BDW64 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDW64/A/B/C/D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDW64

-45

BDW64A

-60

BDW64B

-80

BDW64C

-100

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BDW64D

IC= -30mA; IB= 0

-120

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -2A; IB= -12mA

-2.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -6A; IB= -60mA

-4.0

VBE(on)

Base-Emitter On Voltage

IC= -2A; VCE= -3V

-2.5

VECF

C-E Diode Forward Voltage

IF= -6A

-3.5

BDW64

VCE= -30V; IB= 0

BDW64A

VCE= -30V; IB= 0

BDW64B

VCE= -40V; IB= 0

BDW64C

VCE= -50V; IB= 0

ICEO

Collector Cutoff Current

BDW64D

VCE= -60V; IB= 0

-0.5

BDW64

VCB= -45V; IE= 0

VCB= -45V; IE= 0; TJ= 150℃

-0.2

-5.0

BDW64A

VCB= -60V; IE= 0

VCB= -60V; IE= 0; TJ= 150℃

-0.2

-5.0

BDW64B

VCB= -80V; IE= 0

VCB= -80V; IE= 0; TJ= 150℃

-0.2

-5.0

BDW64C

VCB= -100V; IE= 0

VCB= -100V; IE= 0; TJ= 150℃

-0.2

-5.0

ICBO

Collector Cutoff Current

BDW64D

VCB= -120V; IE= 0

VCB= -120V; IE= 0; TJ= 150℃

-0.2

-5.0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2.0

hFE-1

DC Current Gain

IC= -2A; VCE= -3V

750

20000

hFE-2

DC Current Gain

IC= -6A; VCE= -3V

100

Switching times

ton

Turn-on Time

1.0

μs

toff

Turn-off Time

IC= -3A; IB1= -IB2= -12mA;

VBE(off)= -4.5V, RL=10Ω

5.0

μs

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