Document Number: 89401

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Revision: 19-Apr-11

3

This document is subject to change without notice.

ESH1B, ESH1C, ESH1D

Vishay General Semiconductor

New Product

Fig. 3 - Typical Reverse Leakage Characteristics

Fig. 4 - Typical Instantaneous Forward Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

T

T

T

T

Percent of Rated Peak Reverse Voltage (%)

100

10

0.1

0.01

0.001

1

20

40

60

80

100

T

Instantaneous Forward Voltage (V)

0.2

0.4

0.6

0.8

1.0

0.01

0.1

1

10

100

1.2

1.4

T

T

T

T

Reverse Voltage (V)

0.1

10

1

100

10

100

1

0.1

10

1

100

1

10

100

0.01

t - Pulse Duration (s)

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)