C3751 datasheet(2/2 Pages) ISC

tên linh kiện	C3751

Giải thích chi tiết về linh kiện	isc Silicon NPN Power Transistor

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nhà sản xuất	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3751

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 5mA; RBE= ∞

800

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

1100

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 0.75A; IB= 0.15A

2.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 0.75A; IB= 0.15A

1.5

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

μA

hFE-1

DC Current Gain

IC= 0.1A; VCE= 5V

hFE-2

DC Current Gain

IC= 0.5A; VCE= 5V

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 10V

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

Switching times

ton

Turn-on Time

0.5

μs

tstg

Storage Time

3.0

μs

Fall Time

IC= 1A, IB1= 0.2A; IB2= -0.4A;

RL= 400Ω, VCC= 400V

0.3

μs

hFE-1 Classifications

10-20

15-30

20-40

isc Website：www.iscsemi.cn

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