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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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SW2N70 bảng dữ liệu(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW2N70 bảng dữ liệu(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 7 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Features ■ High ruggedness ■ R DS(ON) (Max 7 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. N-channel MOSFET Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to Source Voltage 700 V I D Continuous Drain Current (@T C=25 oC) 2.0 A Continuous Drain Current (@T C=100 oC) 1.3 A I DM Drain current pulsed (note 1) 8.0 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 140 mJ E AR Repetitive Avalanche Energy (note 1) 2.8 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns P D Total power dissipation (@T C=25 oC) 28 W Derating Factor above 25oC 0.22 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit R thCS Thermal resistance, Junction to Lead Max 40 oC/W R thjA Thermal resistance, Junction to ambient 62.5 oC/W Mar. 2011. Rev. 2.0 1/7 BV DSS : 700V I D : 2A R DS(ON) : 7ohm 1 2 3 SW2N70 SAMWIN Order Codes 1. Gate 2. Drain 3. Source 1 2 3 1 2 3 TO-251 TO-252 Item Sales Type Marking Package Packaging 1 SW I 2N70 SW2N70 TO-251 TUBE 2 SW D 2N70 SW2N70 TO-252 REEL |
Số phần tương tự - SW2N70 |
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Mô tả tương tự - SW2N70 |
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