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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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BA159 bảng dữ liệu(PDF) 1 Page - Naina Semiconductor ltd. |
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BA159 bảng dữ liệu(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor 1 D-95, Sector 63, Noida sales@nainasemi.com Fast Recovery Diode Features • Diffused junction • High efficiency • Low forward voltage drop • Low power loss • High surge current capability Mechanical Characteristics • Case: Molded Plastic • Cathode indicated by Polarity band • Mounting position: Any • Terminals: Finish Tin plated, Solderable MIL-STD-202, Method 208 • Weight: 0.33 grams (approx.) Maximum Ratings (TA = 25 0C unless otherwise specified Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current Peak forward surge current (8.3ms) single half sine superimposed on rated load Thermal and Mechanical Specifications (TA Parameters Typical thermal resistance, junction to ambient Operating and Storage temperature range Electrical Characteristics (TA = 25 0C unless otherwise Parameters Maximum DC forward voltage drop @ 1.0A Maximum DC reverse current @ rated DC blocking voltage Maximum reverse recovery time emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com Fast Recovery Diode, 1.0A , Solderable per C unless otherwise specified) Symbol VRRM VRMS VDC @ TA = 50 0C IF(AV) ms) single half sine-wave IFSM A = 25 0C unless otherwise specified) Symbol Typical thermal resistance, junction to ambient RθJA TJ , TStg - 6 C unless otherwise specified) Symbol A DC VF Maximum DC reverse current @ rated DC blocking TA = 25 0C IR TA = 100 0C tRR DO BA159 4205450 • Fax: 0120-4273653 BA159 Units 1000 V 700 V 1000 V 1.0 A 30 A Values Units 65 0C/W 65 to + 150 0C BA159 Units 1.2 V 5.0 µA 50 500 ns O-41 |
Số phần tương tự - BA159 |
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Mô tả tương tự - BA159 |
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