For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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HMC667LP2 / 667LP2E

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 2.3 - 2.7 GHz

v02.1110

General Description

Features

Functional Diagram

Typical Applications

The HMC667LP2(E) is ideal for:

• WiMAX, WiBro & Fixed Wireless

• SDARS & WLAN Receivers

• Infrastructure & Repeaters

• Access Points

• Telematics & DMB

Parameter

Vdd = +3 Vdc

Vdd = +5 Vdc

Units

Min.

Typ.

Max.

Min.

Typ.

Max.

Frequency Range

2300 - 2700

2300 - 2700

MHz

Gain

14

17.5

16

19

dB

Gain Variation Over Temperature

0.01

0.01

dB/ °C

Noise Figure

0.9

1.2

0.75

1.1

dB

Input Return Loss

10

12

dB

Output Return Loss

15

14

dB

Output Power for 1 dB

Compression (P1dB)

9.5

11.5

13.5

16.5

dBm

Saturated Output Power (Psat)

12.5

17

dBm

Output Third Order Intercept (IP3)

22

29.5

dBm

Supply Current (Idd)

24

32

59

75

mA

The HMC667LP2(E) is a GaAs PHEMT MMIC Low

Noise Amplifier that is ideal for WiMAX, WLAN and

fixed wireless receivers operating between 2300

and 2700 MHz. This self-biased LNA has been

optimized to provide 0.75 dB noise figure, 19 dB

gain and +29.5 dBm output IP3 from a single supply

of +5V. Input and output return losses are excellent

and the LNA requires minimal external matching and

bias decoupling components. The HMC667LP2(E)

can also operate from a +3V supply for lower power

applications.

Low Noise Figure: 0.75 dB

High Gain: 19 dB

High Output IP3: +29.5 dBm

Single Supply: +3V to +5V