For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

7

7 - 3

P1dB vs. Temperature

Psat vs. Temperature

Output IP3 vs. Temperature

Gain, Power, Noise Figure & Supply

Current vs. Supply Voltage @ 10 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+9 Vdc

RF Input Power (RFIN)(Vdd = +5 Vdc)

+18 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 50 mW/°C above 85 °C)

3.25 W

Thermal Resistance

(channel to ground paddle)

52 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (V)

Idd (mA)

+4.5

66

+5.0

67

+5.5

68

+7.5

71

+8.0

72

+8.5

73

Typical Supply Current vs. Vdd

5

8

11

14

17

20

0

2

4

6

8

10

12

14

16

18

20

22

+25C

+85C

-40C

FREQUENCY (GHz)

5

8

11

14

17

20

0

2

4

6

8

10

12

14

16

18

20

22

+25C

+85C

-40C

FREQUENCY (GHz)

15

18

21

24

27

30

0

2

4

6

8

10

12

14

16

18

20

22

+25C

+85C

-40C

FREQUENCY (GHz)

0

2

4

6

8

10

12

14

16

18

20

22

50

52

54

56

58

60

62

64

66

68

70

72

4.5

5

5.5

Gain

P1dB

Noise Figure

Idd

Vdd (V)

GaAs pHEMT MMIC

LOW NOISE AMPLIFIER, 2 - 20 GHz

v04.1010

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS