SML2308CSM4

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current 1

Power Dissipation

Thermal Resistance Junction to Ambient

Maximum Junction and Storage Temperature Range

60V

±

20V

2A

10A

0.8W

0.32W

156°C/W

-55 to +150°C

MECHANICAL DATA

Dimensions in mm (inches)

1

2

3

4

5.59 ± 0.13

(0.22 ± 0.005)

0.23

(0.009)

rad.

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

1.40 ± 0.15

(0.055 ± 0.006)

0.25 ± 0.03

(0.01 ± 0.001)

0.23

(0.009)

min.

N–CHANNEL

ENHANCEMENT MODE

MOSFET

LCC3 PACKAGE (MO-041BA)

Underside View

NOTE:

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

PAD 1 - Drain

PAD 2 - N/C

PAD 3 - Source

PAD 4 - Gate

The SML2308CSM4 is a very low on state

resistance N-Channel enhancement mode

mosfet in a Ceramic Surface Mount pack-

age designed for high rel applications:

FEATURES

• Hermetic Surface Mount Package

• Screening Option Available

Document Number 5331

Issue 1

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.