SML100M12MSF datasheet(2/3 Pages) SEME-LAB

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NORMALLY-OFF SILICON

CARBIDE POWER JFET

SML100M12MSF

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number 8965

Issue 2

Page 2 of 2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Blocking

Voltage

VGS = 0V, ID = 1.0mA

1200

IDSS

Drain-Source Leakage

Current

VDS = 1200V, VGS = 0V

1.0

VDS = 1200V, VGS = -5V

0.11

VGS(th)

Gate Threshold Voltage

VDS = 1.0V, ID = 34mA

0.70

1.00

1.25

IGSS

Gate-Source Leakage

Current

VGS = 2.4V

0.25

1.5

VGS = -15V

0.1

1.5

RDS(on)

(1)

Drain-Source On-resistance

ID = 13A, VGS = 3V, TJ = 25°C

0.09

0.15

ID = 13A, VGS = 3V, TJ = 175°C

0.29

Total Gate Charge

VDS = 600V, ID = 13A,

VGS = 0V to +3V

Qgs

Gate-Source Charge

9.3

ton

Turn-on Delay

(Resistive Load)

VDS = 600V, ID = 13A,

CBP = 33nF, RCL = 110

toff

Turn-off Delay

(Resistive Load)

Rise time (Resistive Load)

Ciss

Input Capacitance

VDS = 100V

642

Coss

Output Capacitance

Crss

Reverse Transfer

Capacitance

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%

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