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Giải thích chi tiết về linh kiện  High Voltage NPN Transistor with Diode
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TSC5302D
High Voltage NPN Transistor with Diode
1/6
Version: F10
TO-251
(IPAK)
TO-252
(DPAK)
Features
●
Build-in Free-wheeling Diode Makes Efficient Anti-saturation
Operation
●
No Need to Interest an hfe Value Because of Low Variable
Storage-time Spread Even Though Comer Spirit Product.
●
Low Base Drive Requirement
●
Suitable for Half Bridge Light Ballast Application
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor with Diode
Ordering Information
Part No.
Package
Packing
TSC5302DCP RO
TO-252
2.5Kpcs / 13” Reel
TSC5302DCP ROG
TO-252
2.5Kpcs / 13” Reel
TSC5302DCH C5
TO-251
75pcs / Tube
TSC5302DCH C5G
TO-251
75pcs / Tube
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
2
A
Collector Peak Current (tp <5ms)
ICM
4
A
Base Current
IB
1
A
Base Peak Current (tp <5ms)
IBM
2
A
Total Dissipation @ Tc ≤ 25
oC
TO-251
Ptot
1.5
W
TO-252
25
Maximum Operating Junction Temperature
TJ
+150
oC
Storage Temperature Range
TSTG
-65 to +150
oC
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RӨJC
6.25
oC/W
Junction to Ambient Thermal Resistance
RӨJA
100
oC/W
Block Diagram
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCEO
400V
BVCBO
700V
IC
2A
VCE(SAT)
1.1V @ IC / IB = 1A / 0.25A


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