SILICON EPITAXIAL

NPN TRANSISTOR

BC378

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8890

Issue 1

Page 2 of 2

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

ICES

Collector Cut off Current

VBE = 0V

VCE = 30V

15

nA

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 2mA

IB = 0

25

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = 10µA

IC = 0

6

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 500mA

IB = 50mA

1.2

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 500mA

IB = 50mA

0.7

V

VBE

(1)

Base-Emitter Voltage

IC = 100mA

VCE = 1.0V

740

mV

IC = 100mA

VCE = 1.0V

75

260

hFE

(1)

Forward-current transfer

ratio

IC = 300mA

VCE = 1.0V

35

-

DYNAMIC CHARACTERISTICS

fT

Transition Frequency

IC = 50mA

VCE = 10V

100

MHz

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

10

pF

VEB = 0.5V

IC = 0

Cibo

Input Capacitance

f = 1.0MHz

30

pF

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%

MECHANICAL DATA

Dimensions in mm (inches)

1

3

2

2.54 (0.100)

Nom.

0.48 (0.019)

0.41 (0.016)

dia.

5.84 (0.230)

5.31 (0.209)

4.95 (0.195)

4.52 (0.178)

TO-18 (TO-206AA) METAL PACKAGE

Underside View

Pin 1 - Emitter

Pin 2 - Base

Pin 3 - Collector