MBRI20100CT datasheet(1/2 Pages) TSC

tên linh kiện	MBRI20100CT

Giải thích chi tiết về linh kiện	20.0AMPS Schottky Barrier Rectifier

PDF	2 Pages

Scroll/Zoom	100%

nhà sản xuất	TSC [Taiwan Semiconductor Company, Ltd]

Trang chủ	http://www.taiwansemi.com

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Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High Surge capability

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

Unit

VRRM

V

VRMS

V

VDC

V

dV/dt

V/uS

RθJC

OC/W

TJ

OC

TSTG

OC

Note2: Thermal Resistance from Junction to Case Per Leg

VF

0.85

0.75

0.95

0.85

V

Maximum Reverse Current

TA=25 ℃

TA=125 ℃

IR

0.1

5

mA

IF(AV)

20

A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

IFSM

150

A

Marking Diagram

Dimensions in inches and (millimeters)

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

High temperature soldering guaranteed: 260℃/

10 seconds at terminals

Green compound with suffix "G" on packing

code & prefix "G" on datecode

WW

= Work Week

Type Number

Case: JEDEC I

2PAK molded plastic

Terminals: Leads solderable per MIL-STD-750, Method 2026

Polarity: As marked

Maximum Ratings and Electrical Characteristics

MBRI20100CT = Specific Device Code

Mounting position: Any

G

= Green compound

Weight: 1.41 grams

MBRI20100CT

I

2PAK

Version:B11

Y

= Year

100

20.0AMPS Schottky Barrier Rectifier

Operating Temperature Range

Storage Temperature Range

2

MBRI20100CT

100

70

Voltage rate of change (Rated VR)

Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle

-65 to + 175

10,000

-65 to + 150

Guarding for over voltage protection

Features

Maximum Thermal Resistance Per Leg (Note 2)

Mechanical Data

Maximum DC blocking voltage

Maximum RMS Voltage

Maximum Repetitive Peak Reverse Voltage

Maximum Average Forward Rectified Current

@Tc = 130℃(Total Device)

Maximum Instantaneous Forward Voltage at (Note 1)

IF = 10A, TA=25℃

IF = 10A, TA=125℃

IF = 20A, TA=25℃

IF = 20A, TA=125℃

Pb

RoHS

COMPLIANCE

RoHS

COMPLIANCE

Số phần tương tự - MBRI20100CT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Taiwan Semiconductor Co...	MBRI20100CT	142Kb / 2P	20.0Amps Surface Mount Schottky Barrier Rectifier
	MBRI20100CT	267Kb / 3P	20.0AMPS Schottky Barrier Rectifier High Surge capability
	MBRI20100CT	248Kb / 4P	Dual Common Cathode Schottky Rectifier
	MBRI20100CT	267Kb / 3P	20.0AMPS Schottky Barrier Rectifier High Surge capability
	MBRI20100CT	248Kb / 4P	Dual Common Cathode Schottky Rectifier

More results

Mô tả tương tự - MBRI20100CT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Taiwan Semiconductor Co...	MBRI20100CT	142Kb / 2P	20.0Amps Surface Mount Schottky Barrier Rectifier
	MBRF20L100CT	186Kb / 2P	20.0AMPS Isolated Low VF Schottky Barrier Rectifier
	MBRF2060D	167Kb / 2P	20.0AMPS Isolated Schottky Barrier Rectifier
	SRF2020	190Kb / 2P	20.0AMPS. Isolated Schottky Barrier Rectifiers
	MBR20H100CT	194Kb / 2P	20.0AMPS. Schottky Barrier Rectifiers
	SR2020	188Kb / 2P	20.0AMPS. Schottky Barrier Rectifiers
	MBRF20H100CT	248Kb / 3P	20.0AMPS Isolated Schottky Barrier Rectifiers
	MBRI20100CT	267Kb / 3P	20.0AMPS Schottky Barrier Rectifier High Surge capability
	SRF2020	247Kb / 3P	20.0AMPS. Isolated Schottky Barrier Rectifiers
Gaomi Xinghe Electronic...	MBR2035CT	881Kb / 2P	20.0AMPS. Schottky Barrier Rectifiers

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MBRI20100CT bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

MBRI20100CT bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

Số phần tương tự - MBRI20100CT

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