DN0150ALP4 datasheet(2/5 Pages) DIODES

2 / 5 page

DN0150ALP4 / DN0150BLP4

Document number: DS31492 Rev. 4 - 2

2 of 5

www.diodes.com

January 2011

DN0150ALP4 / DN0150BLP4

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current – Continuous

100

Peak Pulse Collector Current

ICM

200

Base Current

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

450

Thermal Resistance, Junction to Ambient (Note 4)

RθJA

278

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR)CBO

—

IC = 10μA, IE = 0

Collector-Emitter Breakdown Voltage (Note 5)

V(BR)CEO

—

IC = 1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

—

IE = 10μA, IC = 0

Collector Cut-Off Current

ICBO

—

0.1

μA

VCB = 60V, IE = 0

Emitter Cut-Off Current

IEBO

—

0.1

μA

VEB = 5V, IC = 0

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

VCE(SAT)

—

0.10

0.25

IC = 100mA, IB = 10mA

DC Current Gain

DN0150ALP4

DN0150BLP4

hFE

120

—

240

—

VCE = 6V, IC = 2mA

200

—

400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

—

MHz

VCE = 10V, IE = -1mA

f = 30MHz

Output Capactiance

Cob

—

1.3

—

VCB = 10V, IE = 0,

f = 1MHz

Notes:

4. Device mounted on FR-4 PCB with minimum recommended pad layout.

5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle

≤2%

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