MJD340 datasheet(2/5 Pages) ONSEMI

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MJD340 (NPN) MJD350 (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 1 mA, IB = 0)

VCEO(sus)

300

−

Collector Cutoff Current

(VCB = 300 V, IE = 0)

ICEO

−

0.1

Emitter Cutoff Current

(VBE = 3 V, IC = 0)

IEBO

−

0.1

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 50 mA, VCE = 10 V)

hFE

240

−

Collector−Emitter Saturation Voltage

(IC = 100 mA, IB = 10 mA)

VCE(sat)

−

Base−Emitter On Voltage

(IC = 1 A, VCE = 10 V)

VBE(on)

−

1.5

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 50 mA, VCE = 10 V, f = 10 MHz)

−

MHz

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

300

100

200

300

500

200

TJ = 150°C

+25

°C

VCE = 2 V

VCE = 10 V

-55

°C

+100

°C

TYPICAL CHARACTERISTICS

MJD340

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