MJD243 datasheet(2/8 Pages) ONSEMI

2 / 8 page

MJD243 (NPN), MJD253 (PNP)

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Base Voltage

VCB

100

Vdc

Collector−Emitter Voltage

VCEO

100

Vdc

Emitter−Base Voltage

VEB

7.0

Vdc

Collector Current

−Continuous

−Peak

4.0

8.0

Adc

Base Current

1.0

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

12.5

0.1

W/°C

Total Device Dissipation @ TA = 25°C (Note 1)

Derate above 25°C

1.4

0.011

W/°C

Operating and Storage Junction Temperature Range

TJ, Tstg

−65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient (Note 2)

RqJC

RqJA

89.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. When surface mounted on minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0, TJ = 125°C)

ICBO

−

100

nAdc

mAdc

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

−

100

nAdc

DC Current Gain (Note 3)

(IC = 200 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

180

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

−

0.3

0.6

Vdc

Base−Emitter Saturation Voltage (Note 3)

(IC = 2.0 Adc, IB = 200 mAdc)

VBE(sat)

−

1.8

Vdc

Base−Emitter On Voltage (Note 3)

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

−

2. When surface mounted on minimum pad sizes recommended.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.

4. fT = ⎪hFE⎪• ftest.

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