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November, 2007 - Rev. 4

1

Publication Order Number:

BD809/D

BD809 (NPN), BD810 (PNP)

Plastic High Power

Silicon Transistor

These devices are designed for use in high power audio amplifiers

utilizing complementary or quasi complementary circuits.

Features

• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc

• Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

80

Vdc

Collector-Base Voltage

VCBO

80

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

6.0

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

90

720

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

-55 to +150

°C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction-to-Case

qJC

1.39

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

POWER TRANSISTORS

80 VOLTS

90 WATTS

TO-220AB

CASE 221A-09

STYLE 1

1

http://onsemi.com

MARKING DIAGRAM

BD8xx

=

Device Code

x = 09 or 10

A

=

Assembly Location

Y

=

Year

WW

=

Work Week

G

=

Pb-Free Package

2

3

BD8xxG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

Số phần tương tự - BD810

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	BD810	49Kb / 8P	POWER TRANSISTORS PNP SILICON April, 2002 ??Rev. 1
Savantic, Inc.	BD810	91Kb / 3P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	BD810	127Kb / 1P	Silicon PNP Transistors
Inchange Semiconductor ...	BD810	132Kb / 3P	Silicon PNP Power Transistors
New Jersey Semi-Conduct...	BD810	127Kb / 2P	Silicon PNP Power Transistor

More results

Mô tả tương tự - BD810

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	BD801	93Kb / 4P	Plastic High Power Silicon NPN Transistor
	BD802	94Kb / 4P	Plastic High Power Silicon PNP Transistor
	BD808	104Kb / 4P	Plastic High Power Silicon PNP Transistor
ON Semiconductor	2N5655	89Kb / 4P	Plastic NPN Silicon High-Voltage Power Transistor April, 2002 ??Rev. 7
ON Semiconductor	2N5655	80Kb / 5P	Plastic NPN Silicon High?뭋oltage Power Transistor October, 2006 ??Rev. 9
Usha India Ltd.	2SD880Y	50Kb / 2P	SILICON PLASTIC POWER TRANSISTOR
New Jersey Semi-Conduct...	2N5655	129Kb / 1P	PLASTIC NPN SILICON HIGH-VOLTAGE POWER TRANSISTOR
Continental Device Indi...	CSC3619	250Kb / 2P	NPN SILICON PLASTIC POWER TRANSISTOR
ON Semiconductor	BD802	46Kb / 4P	Plastic High Power Silicon PNP Transistor March, 2001 ??Rev. 9
ON Semiconductor	BD808	49Kb / 4P	Plastic High Power Silicon PNP Transistor January, 2001 ??Rev. 8

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BD810 bảng dữ liệu(PDF) 1 Page - ON Semiconductor

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