BAS21HT1 datasheet(2/4 Pages) ONSEMI

tên linh kiện	BAS21HT1

Giải thích chi tiết về linh kiện	High Voltage Switching Diode

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nhà sản xuất	ONSEMI [ON Semiconductor]

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BAS21HT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 200 Vdc)

(VR = 200 Vdc, TJ = 150°C)

−

0.1

100

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

−

1000

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

−

5.0

Reverse Recovery Time

(IF = IR = 30 mAdc, RL = 100 W)

trr

−

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

0.1

D.U.T.

100

0.1

W OUTPUT

PULSE

GENERATOR

W INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

trr

iR(REC) = 3.0 mA

OUTPUT PULSE

(IF = IR = 30 mA; MEASURED

at iR(REC) = 3.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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