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PCF2129A bảng dữ liệu(PDF) 52 Page - NXP Semiconductors

tên linh kiện PCF2129A
Giải thích chi tiết về linh kiện  Integrated RTC, TCXO and quartz crystal
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PCF2129A bảng dữ liệu(HTML) 52 Page - NXP Semiconductors

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PCF2129A_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 7 May 2010
52 of 69
NXP Semiconductors
PCF2129A
Integrated RTC, TCXO and quartz crystal
11. Limiting values
[1]
Pass level; Human Body Model (HBM) according to Ref. 7 “JESD22-A114”.
[2]
Pass level; Machine Model (MM), according to Ref. 8 “JESD22-A115”.
[3]
Pass level; Charged-Device Model (CDM), according to Ref. 9 “JESD22-C101”.
[4]
Pass level; latch-up testing according to Ref. 10 “JESD78” at maximum ambient temperature (Tamb(max)).
[5]
According to the NXP store and transport requirements (see Ref. 12 “NX3-00092”) the devices have to be
stored at a temperature of +8
°C to +45 °C and a humidity of 25 % to 75 %. For long term storage products
deviant conditions are described in that document.
Table 51.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
−0.5
+4.5
V
IDD
supply current
−50
+50
mA
Vi
input voltage
−0.5
+6.5
V
II
input current
−10
+10
mA
VO
output voltage
−0.5
+6.5
V
IO
output current
−10
+10
mA
at pin SDA/CE
−10
+20
mA
VBAT
battery supply voltage
−0.5
+4.5
V
Ptot
total power dissipation
-
300
mW
VESD
electrostatic discharge
voltage
HBM
[1] -
±3000
V
MM
[2] -
±250
V
CDM
[3] -
±1500
V
Ilu
latch-up current
[4] -200
mA
Tstg
storage temperature
[5]
−55
+85
°C
Toper
operating temperature
−40
+85
°C



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