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SML50B26F bảng dữ liệu(PDF) 2 Page - Seme LAB

tên linh kiện SML50B26F
Giải thích chi tiết về linh kiện  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFET
PDF  5 Pages
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nhà sản xuất  SEME-LAB [Seme LAB]
Trang chủ  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

SML50B26F bảng dữ liệu(HTML) 2 Page - Seme LAB

  SML50B26F Datasheet HTML 1Page - Seme LAB SML50B26F Datasheet HTML 2Page - Seme LAB SML50B26F Datasheet HTML 3Page - Seme LAB SML50B26F Datasheet HTML 4Page - Seme LAB SML50B26F Datasheet HTML 5Page - Seme LAB  
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SML50B26F
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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
26
104
1.3
5
250
500
1.3
4.5
12
18
IS
ISM
VSD
dv / dt
trr
Qrr
Irrm
(Body Diode)
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS ≤ ID [cont]
dI / dt = 100A/µs
VDD ≤ VDSS
VR = 200V
TJ ≤ 150°C
RG = 2.0Ω
IS = – ID [Cont.]
TJ = 25°C
dI / dt = 100A/
µsT
J = 125°C
IS = – ID [Cont.]
TJ = 25°C
dl / dt = 100A/
µsT
J = 125°C
IS = – ID [Cont.]
TJ = 25°C
dl / dt = 100A/
µsT
J = 125°C
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Peak Recovery Current
A
V
V/ns
ns
µC
A
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
pF
nC
ns
3700
4440
510
715
200
300
150
225
25
37
70
105
12
25
10
20
50
75
815
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
VGS = 0V , ID = 250µA
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID = 1.0mA
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current 2
Drain – Source On State Resistance 2
500
25
250
±100
24
26
0.20
V
µA
nA
V
A
Ω
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS



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