SML50A21 datasheet(1/2 Pages) SEME-LAB

tên linh kiện	SML50A21

Giải thích chi tiết về linh kiện	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

PDF	2 Pages

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nhà sản xuất	SEME-LAB [Seme LAB]

Trang chủ	http://www.semelab.co.uk

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SML50A21

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

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VDSS

ID

IDM

VGS

VGSM

PD

TJ , TSTG

TL

IAR

EAR

EAS

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current 1

Gate – Source Voltage

Gate – Source Voltage Transient

Total Power Dissipation @ Tcase = 25°C

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 2

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

500

21

84

±30

±40

235

1.88

–55 to 150

300

21

30

1300

V

A

V

W

W/°C

°C

A

mJ

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting TJ = 25°C, L = 5.90mH, RG = 25Ω, Peak IL = 21A

VDSS

500V

ID(cont)

21A

RDS(on) 0.220Ω

Ω

• Faster Switching

• Lower Leakage

• TO–3 Hermetic Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

D

S

G

12

3

(case)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

6.35 (0.25)

9.15 (0.36)

1.52 (0.06)

3.43 (0.135)

TO–3 Package Outline.

Dimensions in mm (inches)

Pin 1 – Gate

Pin 2 – Source

Case – Drain

Số phần tương tự - SML50A21

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