2SA733-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SA733

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-068,D

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

SOT-23/SOT-323

250

Collector Dissipation

TO-92

Collector Current

-150

Junction Temperature

125

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-100μA, IE=0

-60

Collector-Emitter Breakdown Voltage

BVCEO

IC=-10mA, IB=0

-50

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-100mA, IB=-10mA

-0.1

-0.3

Collector Cut-Off Current

ICBO

VCB=-40V, IE=0

-100

Emitter Cut-Off Current

IEBO

VEB=-3V, IC=0

-100

DC Current Gain

hFE

VCE=-6V, IC=-1mA

600

Current Gain Bandwidth Product

VCE=-10V, IC=-50mA

100

190

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

2.0

3.0

Noise Figure

IC=-0.1mA, VCE=-6V

RG=10kΩ, f=100Hz

4.0

6.0

CLASSIFICATION OF hFE

RANK

RANGE

90-180

135-270

200-400

300-600

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