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STT3402N bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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STT3402N
6.3 A, 30 V, RDS(ON) 27 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
19-Nov-2010 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low RDS(on) assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are power switch, power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
TYPICAL APPLICATIONS
Low RDS(on) Provides Higher Efficiency and
Extends Battery Life.
Low Gate Charge.
Fast Switch.
Miniature TSOP-6 Surface Mount Package
Saves Board Space.
PRODUCT SUMMARY
STT3402N
VDS(V)
RDS(on) (m
ID(A)
30
0.027@VGS= 10V
6.3
0.035@VGS= 4.5V
5.5
PACKAGE INFORMATION
Package
MPQ
LeaderSize
TSOP-6
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Unit
Maximum
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
1
TA= 25°C
ID
6.3
A
TA= 70°C
5.2
Pulsed Drain Current
2
IDM
±20
A
Continuous Source Current (Diode Conduction)
1
IS
1.3
A
Power Dissipation
1
TA= 25°C
PD
1.6
W
TA= 70°C
1.0
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum
Unit
Maximum Junction to Ambient
1
t ≦ 5 sec
RJA
78
°C / W
Notes
1
Surface Mounted on 1” x 1” FR4 Board.
2
Pulse width limited by maximum junction temperature.
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
2.70
3.10
G
0
0.10
B
2.60
3.00
H
0.60 REF.
C
1.40
1.80
J
0.12 REF.
D
1.10 MAX.
K
0°
10°
E
1.90 REF.
L
0.95 REF.
F
0.30
0.50
TSOP-6
B
L
F
H
C
J
D G
K
A
E
1
23
4
5
6
D
G
D
D
D
S


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