SSG4940N datasheet(1/2 Pages) SECOS

tên linh kiện	SSG4940N

Giải thích chi tiết về linh kiện	Dual-N Enhancement Mode Power MOSFET

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nhà sản xuất	SECOS [SeCoS Halbleitertechnologie GmbH]

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SSG4940N

8.3 A, 40 V, RDS(ON) 22 m

Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente

10-Jan-2011 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs

utilize a high cell density trench process to

provide low RDS(on) and to ensure minimal

power loss and heat dissipation. Typical

applications are DC-DC converters and power

management in portable and battery-powered

products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

FEATURES



Low RDS(on) provides higher efficiency and extends battery life.



Low thermal impedance copper leadframe SOP-8 saves board space.



Fast switching speed.



High performance trench technology.

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SOP-8

2.5K

13’ inch

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

1

ID @ TA = 25°C

8.3

A

ID @ TA = 70°C

6.8

A

Pulsed Drain Current

2

IDM

50

A

Continuous Source Current (Diode Conduction)

1

IS

2.3

A

Total Power Dissipation

1

PD @ TA = 25°C

2.1

W

PD @ TA = 70°C

1.3

W

Operating Junction & Storage Temperature Range

TJ, TSTG

-55 ~ 150

°C

THERMAL RESISTANCE RATINGS

Maximum Junction to Ambient

a

t ≦ 10 sec

RθJA

62.5

°C / W

Steady-State

110

°C / W

Notes

1

Surface Mounted on 1” x 1” FR4 Board.

2

Pulse width limited by maximum junction temperature.

SOP-8

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

G

S

G

S

D

Số phần tương tự - SSG4940N

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
VBsemi Electronics Co.,...	SSG4940N	1,006Kb / 9P	Dual N-Channel 40-V (D-S) MOSFET
SeCoS Halbleitertechnol...	SSG4940NC	581Kb / 4P	8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET
VBsemi Electronics Co.,...	SSG4940NC	1,006Kb / 9P	Dual N-Channel 40-V (D-S) MOSFET
SeCoS Halbleitertechnol...	SSG4940NC	581Kb / 4P	Dual-N Enhancement Mode Power MOSFET
SeCoS Halbleitertechnol...	SSG4940N	112Kb / 2P	Dual-N Enhancement Mode Power MOSFET

More results

Mô tả tương tự - SSG4940N

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	SSG4940N	112Kb / 2P	Dual-N Enhancement Mode Power MOSFET
	SSG4940NC	581Kb / 4P	Dual-N Enhancement Mode Power MOSFET
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SSG4940N bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

SSG4940N bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Số phần tương tự - SSG4940N

Mô tả tương tự - SSG4940N

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