DRF1301

The test circuit illustrated in Figure 2 was used to evaluate the DRF1301 (available as an evaluation board DRF13XX/EVALSW.) The input

control signal is applied via IN and SG pins using RG188. This provides excellent noise immunity and control of the signal ground currents.

The +V

for this function must be capable of supporting the RMS currents and frequency of the gate load. R

evaluate the output performance.

Figure 2, DRF1301 Test Circuit

Figure 1, DRF1301 Circuit Diagram

The DRF1301 is configured as a Push Pull Hybrid incorporating two independent channels configured with a common source each consisting of a

driver, a high voltage MOSFET and by-pass capacitors. The function of the by-pass capacitors C1 and C2 is to reduce the internal parasitic loop

inductance. This coupled with the tight geometry of the hybrid allows optimal gate drive to the MOSFET. This low parasitic approach coupled

with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-Ring function; provide improved stability and control in Kilowatt to Multi-

Kilowatt high frequency applications. The IN pin should be referenced to the Kelvin Ground (SG) and is applied to a Schmitt Trigger. The SG

pin is a Kelvin return for the IN pin only. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary

circuitry designed specifically for ring abatement. To further increase the utility of the device the driver die and the MOSFET die are adjacent die

selected. This provides a very close match in the turn on and propagation delays.