Static Characteristics

Source-Drain Diode Characteristics

Dynamic Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

4 C

5 C

V

6 R

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

G

D

S

APT4F120K

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V

BR(DSS)

Drain-Source Breakdown Voltage

V

1200

V

∆V

Breakdown Voltage Temperature Coefficient

Reference to 25°C, I

1.41

V/°C

R

DS(on)

V

3.42

4.2

Ω

V

GS(th)

Gate-Source Threshold Voltage

V

2.5

4

5

V

∆V

Threshold Voltage Temperature Coefficient

-10

mV/°C

I

DSS

Zero Gate Voltage Drain Current

V

V

T

250

μA

T

1000

I

GSS

Gate-Source Leakage Current

V

±100

nA

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

g

fs

Forward Transconductance

V

4.5

S

C

iss

Input Capacitance

V

f = 1MHz

1385

pF

C

rss

Reverse Transfer Capacitance

17

C

oss

Output Capacitance

100

C

o(cr)

4

Effective Output Capacitance, Charge Related

V

40

C

o(er)

5

Effective Output Capacitance, Energy Related

20

Q

g

Total Gate Charge

V

V

43

nC

Q

gs

Gate-Source Charge

7

Q

gd

Gate-Drain Charge

20

t

d(on)

Turn-On Delay Time

Resistive Switching

V

R

6

, V

7.4

ns

t

r

Current Rise Time

4.4

t

d(off)

Turn-Off Delay Time

24

t

f

Current Fall Time

6.9

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

I

S

Continuous Source Current

(Body Diode)

4

A

I

SM

Pulsed Source Current

15

V

SD

Diode Forward Voltage

I

0.8

1.3

V

t

rr

Reverse Recovery Time

I

3

,

di

V

T

170

195

nS

T

330

400

Q

rr

Reverse Recovery Charge

T

.370

μC

T

.820

I

rrm

Reverse Recovery Current

T

4.90

A

T

5.40

dv/dt

Peak Recovery dv/dt

I

T

20

V/ns

MOSFET symbol

showing the integral

reverse p-n junction

diode (body diode)