BC847AT datasheet(2/3 Pages) SECOS

2 / 3 page

BC847AT /BC847BT /BC847CT

NPN Plastic Encapsulate Transistor

Elektronische Bauelemente

06-Jan-2011 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified )

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

VCBO

IC = 10 μA, IE = 0

Collector to Emitter Breakdown Voltage

VCEO

IC = 10 mA, IB = 0

Emitter to Base Breakdown Voltage

VEBO

IE = 1 μA, IC = 0

Collector Cutoff Current

ICBO

VCB = 30 V

Collector to Emitter Saturation Voltage

VCE(sat)

0.25

IC = 10mA, IB = 0.5 mA

0.6

IC = 100mA, IB = 5 mA

Base to Emitter Saturation Voltage

VBE(sat)

0.7

IC = 10mA, IB = 0.5 mA

0.9

IC = 100mA, IB = 5 mA

Base to Emitter Voltage

VBE(on)

580

660

700

VCE = 5 V, IC = 2 mA

770

VCE = 5 V, IC = 10 mA

DC Current Gain

BC847AT

hFE

110

220

VCE = 5 V, IC = 2 mA

BC847BT

200

450

BC847CT

420

800

Transition Frequency

100

MHz

VCE = 5 V, IC = 10 mA

f = 100MHz

Collector Output Capacitance

COb

4.5

VCB = 10 V, f=1MHz

Noise Figure

BC847BT

VCE= 5V, BW= 200HZ,

f= 1KHz, RS= 2 kΩ

BC847CT

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