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BAS16H bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS16H bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() BAS16H Surface Mount Small Signal Switching Diode Elektronische Bauelemente 18-May-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance MARKING T6 or T4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single Diode @ T A = 25°C) Parameter Symbol Ratings Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Peak Forward Surge Current @=1.0μs @=1.0s IFSM 2.0 A 1.0 Power Dissipation PD 200 mW Thermal Resistance Junction to Ambient RθJA 625 °C / W Junction, Storage Temperature TJ, TSTG 125, -65 ~ +150 °C ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage VF1 - - 0.715 V IF = 1mA VF2 - - 0.855 IF = 10mA VF3 - - 1.0 IF = 50mA VF4 - - 1.25 IF = 150mA Reverse Voltage Leakage Current IR - - 1 μA VR = 75V - - 25 nA VR = 20V Capacitance between terminals CT - - 2 pF VR = 0V, f=1MHz Reverse Recovery Time tRR - - 4 nS IF = IR = 10 mA, IRR=0.1xIR, RL=100 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.05 REF. E 0.080 0.180 B 0.20 REF. F 1.15 1.45 C 0.80 1.00 G 1.60 1.80 D 0.25 0.40 H 2.30 2.70 Cathode Band G E A J F D H C B 1 2 SOD-323 |
Số phần tương tự - BAS16H |
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