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2SC4215 bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4215 bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() 2SC4215 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 10-Mar-2011 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small reverse transfer capacitance:Cre = 0.55pF (typ.). Low noise figure:NF=2dB (typ.) (f=100 MHz) CLASSIFICATION OF hFE Product-Rank 2SC4215-R 2SC4215-O 2SC4215-Y Range 40~80 70~140 100~200 Marking QR QO QY PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 mA Collector Power Dissipation PC 100 mW Junction & Storage temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 40 - - V IC=100μA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 4 - - V IE=100μA, IC=0 Collector Cut-off Current ICBO - - 0.1 μA VCB=40V, IE=0 Emitter Cut-off Current IEBO - - 0.5 μA VEB=4V, IC=0 DC Current Gain hFE 40 - 200 VCE=6V, IC=1mA Collector-Base Time Constant Cc.rbb - - 25 ps VCE=6V, IC=1mA, f=30MHz Transition Frequency fT 260 550 - MHz VCE=6V, IC=1mA Reverse Transfer Capacitance Cre - 0.55 - pF VCB=10V, f=1MHz Noise Figure NF - 2 5 dB VCC=6V, IC=1mA, f=100MHz, Power Gain Gpe 17 23 - dB SOT-323 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 |
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