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TLE4953C bảng dữ liệu(PDF) 16 Page - Infineon Technologies AG |
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TLE4953C bảng dữ liệu(HTML) 16 Page - Infineon Technologies AG |
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16 / 20 page ![]() TLE4953 TLE4953C Data Sheet 13 V 4.0, 2010-04 Electro Magnetic Compatibility (values depend on R M!) Characterization of Electro Magnetic Compatibility are carried out on sample base of one qualification lot. Not all specification parameters have been monitored during EMC exposure. Only key parameters as e.g. switching current have been monitored Parameter Symbol Level/Typ Status Ref. ISO 7637-1; test circuit 1; ∆B = 2 mT (amplitude of sinus signal); V CC = 13.5 V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω Testpulse 1 Testpulse 2 Testpulse 3a Testpulse 3b Testpulse 4 Testpulse 5 V EMC IV / – 100 V IV / 100 V IV / – 150 V IV / 100 V IV / – 7 V IV / 86.53) V C1) C1) A A B2) C 1) According to 7637-1 the supply switched "OFF" for t = 200 ms. 2) According to 7637-1 for test pulse 4 the test voltage shall be 12 V ± 0.2 V. Measured with RM =75Ω only. Mainly the current consumption will decrease. Status C with test circuit 1. 3) Applying in the board net a suppressor diode with sufficient energy absorption capability. Ref. ISO 7637-3; test circuit 1; ∆B = 2 mT (amplitude of sinus signal); V CC = 13.5 V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω Testpulse 1 Testpulse 2 Testpulse 3a Testpulse 3b V EMC IV / – 30 V IV / 30 V IV / – 60 V IV / 40 V A A A A Ref. ISO 11452-3; test circuit 1; measured in TEM-cell ∆B = 2 mT; V CC = 13.5 V, fB = 100 Hz; T= 25 °C EMC field strength (TLE4953) ETEM-Cell IV / 200 V/m AM = 80%, f = 1 kHz EMC field strength (TLE4953C) ETEM-Cell IV / 250 V/m AM = 80%, f = 1 kHz |
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