90V

80V

85V

90V

7V

4A

2A

50W

0.200°C

–65 to 200°C

7/00

2N6261

Website: http://www.semelab.co.uk

Collector – Base Voltage

Collector – Emitter Voltage (with base open)

External Base – Emitter (RBE) = 100W)

Collector – Emitter Voltage (with base reverse biased)

Emitter to Base Voltage

Continuous Collector Current

Continuous Base Current

Total Power Dissipation at Tcase = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

3.68

(0.145) rad.

max.

3.61 (0.142)

3.86 (0.145)

rad.

1.27 (0.050)

1.91 (0.750)

9.14 (0.360)

min.

4.83 (0.190)

5.33 (0.210)

6.35 (0.250)

8.64 (0.340)

HOMETAXIAL-BASE

MEDIUM POWER SILICON

NPN TRANSISTOR

FEATURES

• Maximum Safe-area of operation curves

for dc and pulse operation.

• Low Saturation Voltage:

PIN 1 — Base

PIN 2 — Emitter

Case is Collector.

APPLICATIONS

• Power Switching Circuits

• Series and shunt-regulator driver and

output stages

• High-fidelity amplifers

• Solenoid Drivers

MECHANICAL DATA

Dimensions in mm(inches)

TO–66

THERMAL CHARACTERISTICS

R

qJC

Thermal Resistance, Junction to Case

3.5 °C/W

In accordance with JEDEC registration data format